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Estimation of exciton diffusion lengths of organic semiconductors in random domains
发布时间: 2017-12-11     16:44   【返回上一页】 发布人:陈景润


 

北京师范大学数学科学学院

 

计算数学学术报告

 

 

报告题目:Estimation of exciton diffusion lengths of organic semiconductors in random domains

 

报告人: 陈景润 (苏州大学 青年千人)

 

时间地点:121513:30  后主楼1223

 

邀请人:陈华杰

 

报告摘要:Exciton diffusion length plays a vital role in the function of opto-electronic devices. Oftentimes, the domain occupied by a organic semiconductor is subject to surface measurement error. In many experiments, photoluminescence over the domain is measured and used as the observation data to estimate this length parameter in an inverse manner based on the least square method. However,  the result is sometimes found to be sensitive to the surface geometry of the domain. We propose an  asymptotic-based method  as an approximate forward solver whose accuracy is justified both theoretically  and numerically. It only requires to solve several deterministic problems over a fixed domain. Therefore,  for the same accuracy requirement we tested here, the running time of our approach is more than one  order of magnitude smaller than that of directly solving the original stochastic boundary-value problem by the stochastic collocation method. In addition, from numerical results we find that the correlation  length of randomness is important to determine whether a 1D reduced model is a good surrogate.